FDFM2P110 دیتاشیت

FDFM2P110

مشخصات دیتاشیت

نام دیتاشیت FDFM2P110
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FDFM2P110

دانلود دیتاشیت

سایر مستندات

FDFM2P110 9 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDFM2P110
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: DFN-6-EP(3x3)
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MicroFET 3x3mm
  • Package / Case: 6-WDFN Exposed Pad
  • Base Part Number: FDFM2P
  • detail: P-Channel 20V 3.5A (Ta) 2W (Ta) Surface Mount MicroFET 3x3mm

محصولات مشابه